ADVANCES IN APPLIED PHYSICS

A Russian Scientific and Technical Journal
2013, Vol. 1, No. 2

Peculiarities of changes in electrical properties of the silicon p+–n–n+-structures irradiated with electrons.

A.M. Musaev

Kh.I. Amirkhanov Institute of Physics,
Dagestan Scientific Center of the Russian Academy of Sciences.
94 Yaragsky str., Makhachkala, 367003, Russia
E-mail: akhmed-musaev@yandex.ru

       The effect of electron irradiation with energy 4 MeV on change of the basic electrical characteristics of the silicon diffused p+-n-n+-structures is researched. It is shown that the efficiency of injection and distribution of radiation defects in different regions of the structures significantly depend on an irradiation dose. We give a physical explanation for the observed effects.

PACS: 61.82.Fk
Keywords: p-n-structures, silicon, electron irradiation, radiation defect, direct voltage drop, inverse current, barrier capacitance, temperature.

Bibliography – 9 references                          Received January 15, 2013

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