ADVANCES IN APPLIED PHYSICSA Russian Scientific and Technical Journal2013, Vol. 1, No. 2 |
Photosensitive MIS sructures based on ultrathin plasmic InAs oxideV.G. Kesler, A.A. Guzev, A.P. Kovchavtsev, G.L Kuryshev, A.V. Tsarenko, and Z.V. PanovaA.V. Rzhanov Institute of Semiconductor Physics, SB RAS 13 Lavrentiev av., Novosibirsk, 630090, Russia E-mail: kesler@isp.nsc.ru
The results of InAs surface passivation by the ultrathin oxide films (~3nm) grown in glow discharge plasma are presented.
First, for InAs-based MIS structures at the liquid nitrogen temperature, unhysterisis capacity dependencies on the voltage within
the range -7·106 to +5·106 V/cm were observed. The produced MIS structures are
current-sensitive in the IR range. Dark equivalent current provides obtaining the estimation of detectability at
nitrogen temperatures is not worse than 1012 cm Hz1/2 W-1. The protection of structures
surfaces with an additional Al2O3 layers is discussed.
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