ADVANCES IN APPLIED PHYSICS

A Russian Scientific and Technical Journal
2013, Vol. 1, No. 2

Features of the UV 320x256 AlGaN p-i-n FPAs

K.O. Boltar1,2, I.D. Burlakov1, M.V. Sednev1, and N.I. Iakovleva1

1Orion Research-and-Production Association,
46/2 Enthusiasts highway, Moscow, 111123, Russia
E-mail: orion@orion-ir.ru

2Moscow Institute of Physics and Technology
9 Institute al., Dolgoprudny, Moscow Region, 141700, Russia


       The UV 320x256 AlGaN FPAs on the basis of p-i-n photodiodes with 30 μm pitch and 20x20 μm area have been formed and investigated to approve the capability of UV imager creation. Performance of UV p-i-n photodiodes has been estimated by measuring the current-voltage characteristics. The dark currents of mesa structure elements were less than 10-13 A and resistance were more than 1012 Ohm·cm.

PACS: 42.79.Pw, 85.60.Gz, 07.57.Kp, 85.60.Dw
Keywords: AlGaN, GaN, UV spectral range, heteroepitaxial structures, p–i–n photodiode, FPA.

Bibliography – 19 references                          Received March 27, 2013

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