A Russian Scientific and Technical Journal
2013, Vol. 1, No. 2

Peculiarities of changes in electrical properties of the silicon p+–n–n+-structures irradiated with electrons.

A.M. Musaev

Kh.I. Amirkhanov Institute of Physics,
Dagestan Scientific Center of the Russian Academy of Sciences.
94 Yaragsky str., Makhachkala, 367003, Russia

       The effect of electron irradiation with energy 4 MeV on change of the basic electrical characteristics of the silicon diffused p+-n-n+-structures is researched. It is shown that the efficiency of injection and distribution of radiation defects in different regions of the structures significantly depend on an irradiation dose. We give a physical explanation for the observed effects.

PACS: 61.82.Fk
Keywords: p-n-structures, silicon, electron irradiation, radiation defect, direct voltage drop, inverse current, barrier capacitance, temperature.

Bibliography – 9 references                          Received January 15, 2013

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