A Russian Scientific and Technical Journal
2013, Vol. 1, No. 2

Photosensitive MIS sructures based on ultrathin plasmic InAs oxide

V.G. Kesler, A.A. Guzev, A.P. Kovchavtsev, G.L Kuryshev, A.V. Tsarenko, and Z.V. Panova

A.V. Rzhanov Institute of Semiconductor Physics, SB RAS
13 Lavrentiev av., Novosibirsk, 630090, Russia

       The results of InAs surface passivation by the ultrathin oxide films (~3nm) grown in glow discharge plasma are presented. First, for InAs-based MIS structures at the liquid nitrogen temperature, unhysterisis capacity dependencies on the voltage within the range -7·106 to +5·106 V/cm were observed. The produced MIS structures are current-sensitive in the IR range. Dark equivalent current provides obtaining the estimation of detectability at nitrogen temperatures is not worse than 1012 cm Hz1/2 W-1. The protection of structures surfaces with an additional Al2O3 layers is discussed.

PACS: 73.40.Qv, 81.65.Mq, 81.65.Rv
Keywords: indium arsenide, thin films, glow discharge plasma, dielectric films, oxidation.

Bibliography – 14 references                          Received January 15, 2013

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