A Russian Scientific and Technical Journal
2013, Vol. 1, No. 2

Epitaxial growth of CdxHg1-xTe layers on the large diameter GaAs substrates by MOCVD method

A.V. Chilyasov, A.N. Moiseev, B.S. Stepanov, K.E. Savlinov, A.P. Kotkov, and N.D. Grishnova

G.G. Devyatykh Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences
49 Troponin str., Nizhny Novgorod, 603950, Russia

       The MOCVD growth technology was developed to obtain CdxHg1-xTe epilayers with compositions having x= 0.22-0.45 (lateral nonuniformity Δх=± 0.002–0.003 ) on the 2 inch GaAs(310) substrates. CdxHg1-xTe epilayers exhibit p-type conductivity with charge carrier concentration p77=(0.6-2.0)·1016 cm-3, mobility μ77=185-450 cm2/V·s and lifetime of nonequilibrium charge carriers τ77=100-200 ns. The hillock surface density of CdxHg1-xTe epilayers did not exceed 100 cm-2.

PACS: 81.05.Dz; 81.15.Gh
Keywords: mercury-cadmium-telluride, epitaxy, MOCVD, GaAs sustrate, diethyltellurium, diisopropyltellurium, dimethylcadmium

Bibliography – 21 references                          Received January 20, 2013

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