ADVANCES IN APPLIED PHYSICSA Russian Scientific and Technical Journal2013, Vol. 1, No. 2 |
Epitaxial growth of CdxHg1-xTe layers on the large diameter GaAs substrates by MOCVD methodA.V. Chilyasov, A.N. Moiseev, B.S. Stepanov, K.E. Savlinov, A.P. Kotkov, and N.D. GrishnovaG.G. Devyatykh Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences 49 Troponin str., Nizhny Novgorod, 603950, Russia E-mail: tchilyasov@ihps.nnov.ru
The MOCVD growth technology was developed to obtain CdxHg1-xTe epilayers with
compositions having x= 0.22-0.45 (lateral nonuniformity Δх=± 0.002–0.003 ) on the 2 inch GaAs(310) substrates. CdxHg1-xTe
epilayers exhibit p-type conductivity with charge carrier concentration p77=(0.6-2.0)·1016 cm-3,
mobility μ77=185-450 cm2/V·s and lifetime of nonequilibrium charge
carriers τ77=100-200 ns. The hillock surface density of CdxHg1-xTe epilayers did not exceed 100 cm-2.
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